As silicon-based transistors approach their physical limits, 2D materials like MoS2 with unique electronic properties are considered one of the potential alternatives to silicon for future electronics. In this work, we fabricate a MoS2-based transistor and investigate its device performance at cryogenic temperatures, relevant for quantum computing applications. Using mechanical exfoliation, we successfully transfer MoS₂ films on a SiO2/Si substrate and fabricate transistors. Then we perform electrical measurements from room temperature (300 K) to cryogenic temperatures (down to 4 K), at which the device shows great performance with effective current modulation by bottom gate control, very low subthreshold swings, and high ON/OFF ratios. What is more important is that at cryogenic temperatures, the transistor still performs very well, showing the great potential of MoS2 for low-power and high-performance cryogenic electronic devices.